 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 9.1487B PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l l IRFI9540N HEXFET(R) Power MOSFET D VDSS = -100V RDS(on) = 0.117 G S ID = -15A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. -15 -10 -76 54 0.36 20 430 -11 5.4 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. --- --- Max. 2.8 65 Units C/W 3/16/98 IRFI9540N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Min. -100 --- --- -2.0 5.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- --- --- --- --- --- --- --- --- --- 15 67 51 51 4.5 7.5 1300 400 240 12 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 0.117 VGS = -10V, ID = -7.8A -4.0 V VDS = VGS, ID = -250A --- S VDS = -50V, ID = -11A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 97 ID = -11A 15 nC VDS = -80V 51 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -11A ns --- RG = 5.1 --- RD = 4.2, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- VDS = -25V pF --- = 1.0MHz, See Fig. 5 --- = 1.0MHz Source-Drain Ratings and Characteristics IS I SM V SD t rr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- -15 showing the A G integral reverse --- --- -76 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -7.8A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830 1200 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRF9540N data and test conditions Starting TJ = 25C, L = 7.1mH RG = 25, IAS = -11A. (See Figure 12) ISD -11A, di/dt -470A/s, VDD V(BR)DSS, TJ 175C IRFI9540N 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 100 -ID , D rain-to-S ource C urrent (A ) -ID , D rain-to-S ource C urrent (A ) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 10 -4.5V 20 s P U LS E W ID TH T C = 175C 0.1 1 10 -4.5V 1 0.1 1 20 s P U LS E W ID TH T c = 25C A 10 100 1 A 100 -VD S , D rain-to-S ource V oltage (V ) -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 TJ = 2 5 C TJ = 1 7 5 C 10 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D = -19A -I D , D rain-to -S o urc e C urre nt (A ) 2.0 1.5 1.0 1 0.5 0.1 4 5 6 7 V D S = -2 5 V 2 0 s P U L S E W ID T H 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10V 100 120 140 160 180 A -VG S , G a te -to -S o u rc e V o lta g e (V ) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFI9540N 3000 2500 -V G S , G ate-to-S ource V oltage (V ) V GS C is s C rs s C oss = = = = 0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd 20 I D = -1 1A V D S = -80V V D S = -50V V D S = -20V 16 C , C apacitanc e (pF ) 2000 C is s 12 1500 C os s 1000 8 C rs s 500 4 0 1 10 100 A 0 0 20 40 FO R TE S T C IR C U IT S E E FIG U R E 1 3 60 80 A 100 -VD S , D rain-to-S ource V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -I S D , R everse D rain C urrent (A ) O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (on) 10 -I D , D rain C urrent (A ) 100 T J = 175C T J = 25C 10 0 s 10 1m s 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 V G S = 0V 1.4 A 1 1 T C = 25C T J = 175C S ingle P uls e 10 10m s 1.6 A 100 1000 -VS D , S ource-to-D rain V oltage (V ) -VD S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFI9540N 15 VDS VGS RD D.U.T. + -ID , Drain Current (A) 10 -10V Pulse Width 1 s Duty Factor 0.1 % 5 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 175 10% TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 P DM t1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - RG VDD IRFI9540N E A S , S ingle P ulse A valanc he E nergy (m J) VDS L 1200 TO P 1000 RG D .U .T IA S VD D A D R IV E R B O TTO M ID -4.7A -8.1A -11A -20V tp 0.01 800 600 15V 400 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 A 175 IAS S tarting T J , Junction T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + QGS QGD D.U.T. - -10V VDS IRFI9540N Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS IRFI9540N Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) M IN . 1 2 3 NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M AM B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189) Part Marking Information TO-220 Fullpak E X AE X A M P: L E : IS HIS A N AIR F IR0F I8 4 0 G MPLE TH T IS IS N 1 1 0 W ITH ITH S E M B L Y L Y W AS ASSEMB L O TL O T D E D E 1E 4 0 1 CO CO 9B M A IN TE R N A T IO N A L IN T E R N A T IO N A L R E C TIF IE R IR FF I81 0 G R E C T IF IE R IR 1 0 4 0 LOGO 9246 LOGO 9 B 40 1 1 M E 92 45 A S S E MML Y Y ASSE B BL L OT T COO DE LO CDE P A R T N U M B E RA PART NUMBER D A TE C O D E (Y Y W E ) O D E DAT W C Y(Y Y=W Y E)A R Y W YY = W AR W W = YE E E K W W = W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 |
Price & Availability of IRFI9540N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |